Electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece

ABSTRACT

The present invention includes electronic device workpieces, methods of semiconductor processing and methods of sensing temperature of an electronic device workpiece. In one aspect, the invention provides an electronic device workpiece including: a substrate having a surface; a temperature sensing device borne by the substrate; and an electrical interconnect formed upon the surface of the substrate, the electrical interconnect being electrically coupled with the temperature sensing device. In another aspect, a method of sensing temperature of an electronic device workpiece includes: providing an electronic device workpiece; supporting a temperature sensing device using the electronic device workpiece; providing an electrical interconnect upon a surface of the electronic device workpiece; electrically coupling the electrical interconnect with the temperature sensing device; and sensing temperature of the electronic device workpiece using the temperature sensing device.

TECHNICAL FIELD

The present invention relates to electronic device workpieces, methodsof semiconductor processing and methods of sensing temperature of anelectronic device workpiece.

BACKGROUND OF THE INVENTION

It is preferred in the semiconductor and related arts to utilize largewafers for fabrication of integrated circuits and other devices. Largewafers are preferred inasmuch as an increased number of chips can befabricated from larger workpieces. As the size of the wafers continuesto increase as processing techniques are improved, additional processingobstacles are presented.

For example, it is typically preferred to provide a substantiallyconstant temperature across the surface of the wafers being processedbecause changes in temperature can influence device fabrication. Wafersof increased diameters and surface areas experience increasedtemperature fluctuations at various locations on the workpiece. Inparticular, a partial vacuum is typically used to pull small diameterwafers into direct thermal contact with a hot plate. Such processingmethods facilitate substrate temperature control because the substratetemperature is closely associated to the temperature of the hot plate.Fabrication of small sub-micron devices upon larger diametersemiconductor wafers or workpieces requires minimal backsidecontamination. As such, contact of the workpiece with a hot plate is nottypically not possible. Such workpieces are processed in conventionaloperations upon spacers or pins that position the workpieceapproximately 0.1 millimeters above the hot plate heating surface. Suchspacing intermediate a chuck or hot plate and the workpiece results insubstrate temperatures which can be influenced by the environment abovethe substrate. Inconsistencies in temperature across the surface of theworkpiece often result.

Absolute temperature and temperature uniformity of a workpiece areparameters which are closely monitored during wafer and workpiecefabrication to provide critical dimension (CD) control. Chemicallyamplified resists are utilized in deep ultraviolet (DUV) lithography insmall micron geometries (eg., 0.25 microns and below). Chemicallyamplified resists are particularly temperature dependent furtherincreasing the importance of temperature control and monitoring. Somethermal resist processing steps require process windows ranging from 1-2degrees centigrade down to a few tenths of a degree centigrade.Meteorology that is four to ten times more precise than conventionalprocess equipment may be required to provide thermal performancemeasurements to 0.1 degrees centigrade.

One approach has disclosed the use of temperature sensors across asurface of the wafer to provide temperature mapping of the workpieceduring processing. Platinum foil leads and copper leads are utilized toelectrically connect the temperature sensors. With the use of numeroustemperatures sensors across an entire workpiece surface, numerous wiresare required for coupling and monitoring. Such numerous wiredconnections can break and/or adversely impact processing of theworkpiece or the temperature measurements taken of the surface of theworkpiece. Some temperature sensors require four leads per sensorfurther impacting the processing and temperature monitoring of theworkpieces.

Therefore, there exists a need to provide improved temperaturemonitoring of workpieces which overcomes the problems experienced in theprior art.

SUMMARY OF THE INVENTION

The present invention includes electronic device workpieces, methods ofsemiconductor processing and methods of sensing temperature of anelectronic device workpiece. Exemplary electronic device workpiecesinclude semiconductor wafers.

One electronic device workpiece includes a substrate having an uppersurface and a temperature sensing device borne by the substrate. Thetemperature sensing device can comprise a preexisting device.Alternatively, the temperature sensing device can be formed upon asurface of the electronic device workpiece. The temperature sensingdevice comprises a resistance temperature device (RTD) in oneembodiment. A plurality of temperature sensing devices are provided intemperature sensing relation with the electronic device workpiece in anexemplary embodiment.

An electrical interconnect is preferably provided upon the surface ofthe substrate. The electrical interconnect comprises a conductive tracein a preferred embodiment. The electrical interconnect is electricallycoupled with the temperature sensing device. The electrical interconnectcan be wire bonded to or physically coupled with the temperature sensingdevice. The electrical interconnect can be configured to couple thetemperature sensing device with an edge of the electronic deviceworkpiece. An interface can be provided to couple the electricalinterconnects with external circuitry. Exemplary electrical circuitryincludes a data gathering device, such as a digital computer.

An isolator is formed intermediate the temperature sensing device andelectrical interconnect, and the substrate of the electronic deviceworkpiece in one embodiment. The isolator provides electrical isolation.An exemplary isolator comprises silicon dioxide.

Temperature sensing devices are provided within a cavity formed withinthe substrate of the electronic device workpieces according to anotherembodiment. The cavity is preferably formed by an anisotropic etchforming sidewalls at an approximate angle of fifty-four degrees withrespect to the surface of the substrate. Alternatively, temperaturesensing devices are formed or positioned upon a surface of theelectronic device workpiece.

The electronic device workpiece comprises a calibration workpiece in oneembodiment. In another embodiment, the electronic device workpiececomprises a workpiece which undergoes processing from which subsequentdevices are formed, such as a silicon wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is an isometric view of an electronic device workpiece having aplurality of temperature sensing devices.

FIG. 1A is an isometric view of an alternative electronic deviceworkpiece.

FIG. 1B is a cross-sectional view of one configuration of an interfaceof the electronic device workpiece.

FIG. 2 is a cross-sectional view of a first embodiment of a temperaturesensing device upon the electronic device workpiece.

FIG. 2A is a cross-sectional view of an alternative configuration of anelectrical connection coupled with the temperature sensing device shownin FIG. 2.

FIG. 3 is a cross-sectional view of a second embodiment of a temperaturesensing device upon the electronic device workpiece.

FIG. 4 is an elevated plan view of the temperature sensing device shownin FIG. 3.

FIG. 5 is a cross-sectional view of a temperature sensing deviceprovided upon an upper surface of the electronic device workpiece.

FIG. 6 is a cross-sectional view illustrating an electrical connectioncoupled with a temperature sensing device upon the electronic deviceworkpiece.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

Referring to FIG. 1, an electronic workpiece 10 is illustrated.Exemplary electronic device workpieces include a semiconductor wafer ora crystal mask substrate. In one embodiment, electronic device workpiece10 includes a substrate 11 comprising a semiconductive substrate.Substrate 11 can comprise silicon, silicon carbide and gallium nitride.Alternatively, electronic device workpiece 10 can comprise othersubstrates. In particular, electronic device workpiece 10 can compriseother components configured for application within an electronic orelectrical device or configured for processing to form such components.

Electronic device workpiece 10 is coupled with external circuitry 12.The illustrated external circuitry 12 includes plural connections 14 anda resistance thermometer 16. An interface 18 is provided in a preferredembodiment to provide convenient coupling of circuitry formed uponelectronic device workpiece 10 and electrical connections 14 ofcircuitry 12.

External circuitry 12 can be implemented in other configurations. Forexample, resistance thermometer 16 comprises a data gathering device inalternative embodiments. Connections 14 are configured to coupleelectronic device workpiece 10 with a digital computer configured tomonitor process conditions including the temperature of electronicdevice workpiece 10. External circuitry 12 includes communicationdevices in other embodiments of the invention to transmit processconditions.

Electronic device workpiece 10 includes an upper surface 20 and lowersurface 22 opposite upper surface 20. Electronic device workpiece 10additionally includes an edge 24 which is circular in the describedembodiment.

According to the present invention, at least one temperature sensingdevice 30 is provided upon at least one surface of electronic deviceworkpiece 10. A plurality of temperature sensing devices 30 are providedupon electronic device workpiece 10 in a preferred embodiment. In theillustrated embodiment, a plurality of temperature sensing devices 30are provided upon or supported by upper surface 20 of electronic deviceworkpiece 10. Temperature sensing devices 30 are preferably borne bysubstrate 11 of electronic device workpiece 10 and may be formed uponlower surface 22 as well as upper surface 20.

In one embodiment, temperature sensing devices 30 comprise resistancetemperature devices (RTD). Resistance temperature devices providecontact temperature sensing in preferred modes of operation. Inparticular, resistance temperature devices can comprise a wire wounddevice that provides a linear resistance change for a correspondingtemperature change. Typically, the coefficient of temperature ofresistance temperature devices is positive wherein the resistancethrough the resistance temperature device increases as temperatureincreases.

Exemplary resistance temperature devices comprise sensitive materialswhich provide a plurality of resistances corresponding to a temperatureprofile. Resistance temperature devices can comprise platinum,polysilicon or other sensitive materials.

In another embodiment, temperature sensing devices 30 comprise diodeswhich provide a change in threshold voltage responsive to temperaturechanges. Such voltage changes are sufficient to enable monitoring ofassociated temperatures and extraction of temperature information. Othertemperature sensing devices 30 comprise thermocouples which comprise twooverlapping dissimilar metals to create a voltage producing junctionwhich varies dependent upon temperature exposure. Further temperaturesensing devices 30 include a thermistor which comprises a mixture ofmetal oxides and encapsulated in an isolator such as epoxy or glass.

As described in detail below, temperature sensing devices 30 can befabricated or formed upon the electronic device workpiece 10 or comprisepreexisting devices which are positioned and adhered upon or attached tothe electronic device workpiece 10. Fabricated temperature sensingdevices 30 are available from Watlow Electrical Manufacturing Company ofSt. Louis, Mo.

Electrical interconnects 40, 41 are provided to electrically couple withindividual temperature sensing devices 30. In a preferred embodiment,electrical interconnects 40, 41 are formed upon upper surface 20 ofsubstrate 11. In embodiments where plural temperature sensing devices 30are provided, individual electrical interconnects 40, 41 areindividually coupled with respective temperature sensing devices 30.

Electrical interconnects 40, 41 are formed upon upper surface 20 ofsubstrate 11 in one embodiment. Such formed electrical interconnects 40preferably comprise conductive traces. The conductive traces cancomprise aluminum or other conductive materials. The conductive tracesare formed by sputtering in one fabrication method. Electricalinterconnects 40, 41 can comprise other conductors in other embodiments.Electrical interconnects 40, 41 electrically couple individualtemperature sensing devices 30 with edge 22 of electronic deviceworkpiece 10.

An isolator (not shown in FIG. 1) is provided intermediate upper surface20 and temperature sensing devices 30 and electrical interconnects 40,41. The isolator comprises silicon dioxide or other suitable insulativematerial.

Interface connection 18 is provided in electrical connection withelectrical interconnects 40, 41. The depicted interface connection 18 islocated proximate to edge 22 of electronic device workpiece 10.Interface connection 18 is configured to provide electrical coupling ofelectrical interconnects 40, 41 and the respective temperature sensingdevices 30 with circuitry 12 external of electronic device workpiece 10.Exemplary interface connection configurations include tab tape, adapter,flip chip connections, wire bond connections, and conductive adhesives.Interface connection 18 can include other configurations in accordancewith the present invention.

Referring to FIG. 1A, an alternative interface connection 18 a isillustrated. Connection 18 a provides electrical coupling of temperaturesensing devices 30 with electrical circuitry 12. The depicted interfaceconnection 18 a is defined by edge 24 of workpiece 10.

Referring to FIG. 1B, yet another interface connection 18 b isillustrated. The depicted interface connection 18 b comprises respectivemating plug and receptacle components 13, 15. Plug component 13 iscoupled with wires 14 of external circuitry 12 (although three wires 14are shown in FIG. 1B, additonal wires of circuitry 12 can be coupledwith plug 13). Plug 13 is configured for removable coupling withcomponent 15.

Receptacle component 15 is configured to receive plug 13 and forattachment to electrical interconnections 40, 41 (only oneinterconnection 40 is shown in FIG. 1B). When mated, components 13, 15couple external circuitry 12 with respective interconnections 40, 41.

A plurality of interconnects 7 are used in the depicted embodiment tocouple internal electrical connections 17 of components 13, 15 withinterconnections 40, 41. Exemplary interconnects 7 include solder,solder balls, conductive epoxy, etc.

Referring to FIG. 2, electronic device workpiece 10 includes a cavity 50formed within substrate 11. Cavity 50 includes plural sloping sidewalls52, 53 and a bottom wall 54. Surface 20 of substrate 11 includessidewalls 52, 53, and bottom wall 54. An exemplary cavity 50 has a depthof approximately 200 microns and bottom wall 54 has a width ofapproximately 300 microns.

Cavity 50 is preferably formed by an anisotropic etch. An exemplaryanisotropic etch includes potassium hydroxide (KOH). Utilization of ananisotropic etch provides sloping sidewalls 52, 53 within cavity 50.Provision of sloping sidewalls 52, 53 facilitates fabrication ofconductors 40, 41 over surface 20 and isolator 56, and sidewalls 52, 53of cavity 50. Sidewalls 52, 53 are preferably sloped at an angle withinthe approximate range of 50 to 60 degrees with respect to upper surface20 of substrate 11. The most preferred embodiment provides sidewalls 52,53 having an angle of 54 degrees with respect to upper surface 20.

Cavity 50 is formed by an isotropic etch in an alternative embodiment.Wire bonded connections are preferably utilized in such an embodiment toprovide electrical coupling of interconnects 40, 41 upon surface 20 withthe temperature sensing device 30 provided within cavity 50.

One temperature sensing device 30 is shown borne by substrate 11 ofelectronic device workpiece 10. An isolation layer 56 is shown overelectronic device workpiece 10. Isolator 56 is formed over upper surface20 of substrate 11 including sidewalls 52, 53 and bottom wall 54 ofcavity 50.

A preexisting temperature sensing device 30 is positioned and adheredwithin cavity 50 in the depicted embodiment of FIG. 2. Temperaturesensing device 30 is adhered using standard thermal conductive epoxiesor adhesives in one embodiment. A temperature sensing device is formed.within cavity 50 in other embodiments described below. Bottom wall 54supports temperature sensing device 30 in the depicted embodiment.Temperature sensing device 30 is supported by upper surface 20 ofsubstrate 11 in other embodiments.

Electric interconnects or conductive traces 40, 41 are formed over uppersurface 20 and sidewall 52 in the depicted embodiment (only conductivetrace 40 is shown in FIG. 2). The illustrated electrical interconnect 40is provided over a portion of bottom wall 54. An additional electricalconnection 58 is utilized to electrically couple temperature sensingdevice 30 with conductive trace or electrical interconnect 40. In oneembodiment, electrical connection 58 comprises a wire connection, suchas that formed by wire bonding. Other forms of connections such as tabtape and flip chip connections can also be employed. Connection 58 ispreferably encapsulated to minimize damage to connection 58. A dispensedepoxy 57 is utilized in one embodiment to encapsulate connection 58. Asshown, it is preferred to leave a portion of the area adjacenttemperature sensing device 30 free of epoxy for accurate temperaturesensing.

In other embodiments, contacting of conductive trace 40 with temperaturesensing device 30 is sufficient to electrically couple trace 40 andtemperature sensing device 30.

Referring to FIG. 2A, the illustrated electrical interconnection 40 isformed outside of cavity 50. Connection 58 is used to couple temperaturesensing device 30 with the depicted interconnection 40 at a locationupon interconnection 40 outside of cavity 50.

Temperature sensing device 30 is preferably provided upon electronicdevice workpiece 10 in a temperature sensing relation with respect toelectronic device workpiece 10. Temperature sensing device 30 isconfigured to sense the temperature of an area of electronic deviceworkpiece 10 immediately adjacent the attached device 30. In oneembodiment, the resistance of temperature sensing device 30 changescorresponding to changes in temperature. Such changes in resistancechange the voltage drop across temperature sensing device 30 therebychanging signals (for example the currents of the signals) passingthrough temperature sensing device 30. The generated signals correspondto the temperature of the area of the electronic device workpiece 10being sensed. Electrical interconnects 40, 41 conduct the generatedsignals to interface connection 18 and external circuitry 12 in thepreferred embodiment. Exemplary external circuitry 12 contains devicesthat convert the received signals to localized temperatures at specificpoints.

Referring to FIGS. 3 and 4, like reference numerals as used herein referto like components with any significant differences therebetweenrepresented by an alphabetical suffix such as “a”. A temperature sensingdevice 30 a is shown formed within cavity 50 of substrate 11. Electronicdevice workpiece 10 includes a conductive trace 40 extending uponisolator 56 over a portion of upper surface 20, down sidewall 52 andacross bottom wall 54 of cavity 50. Another conductive trace 41 iscoupled with temperature sensing device 30 a as shown in FIG. 4.

Temperature sensing device 30 a is shown formed within cavity 50 uponconductor 40. The illustrated temperature sensing device 30 a is aresistance temperature device. The resistance temperature devicecomprises a conductive material such as polysilicon or metals such asplatinum. Other materials can also be utilized. Similarly, a combinationof metals and polysilicon can also be utilized. In a preferredembodiment, temperature sensing device 30 a comprises polysilicondeposited by chemical vapor deposition (CVD). The deposited polysiliconcan thereafter be doped by ion implantation or diffusion to provide adesired resistivity. Alternatively, doped polysilicon using PECVDtechniques can also be deposited. The polysilicon resistance temperaturedevice can thereafter be patterned such as by etching. Electricalinterconnect 40 and temperature sensing devices 30 can be formed withthin film processing techniques or thick film techniques using astencil.

Referring to FIG. 4, the illustrated RTD temperature sensing device 30 acomprises polysilicon patterned in an exemplary serpentineconfiguration. Temperature sensing device 30 a can be configured inother shapes and formats in other embodiments. Temperature sensingdevice 30 a is formed upon bottom wall 54 of cavity 50. Opposing ends oftemperature sensing device 30 a are individually coupled with pluralelectrical interconnects 40, 41. An electrical signal entering via oneof electrical interconnects 40, 41 passes through temperature sensingdevice 30 a and exits through the opposite electrical interconnect. Achange of temperature at bottom wall 54 results in a change inresistance of temperature sensing device 30 a. Accordingly, the voltagedrop across temperature sensing device 30 a changes with respect tofluctuations in temperature of the area of electronic device workpiece10 adjacent device 30 a. Electronic interconnects 40, 41 are configuredto conduct electrical signals which indicate a temperature of electronicdevice workpiece 10.

Providing temperature sensing devices within cavities of the electronicdevice workpiece enables temperature mapping of the workpiece in threedimensions. Temperature sensing devices can be provided both on thesurfaces of an electronic device workpiece and within cavities formedwithin the workpiece. Temperature sensing devices upon one or bothsurfaces of the electronic device workpiece enable temperature mappingin x-y directions upon the respective surfaces of the workpiece.Providing temperature sensing devices within cavities of the workpieceenable temperature sensing within the z direction intermediate thesurfaces of the workpiece.

Referring to FIG. 5, temperature sensing device 30 a is formed oversurface 20 of substrate 11 of electronic device workpiece 10 andisolator layer 56. In the depicted embodiment, at least a portion oftemperature sensing device 30 a is formed or positioned upon electricalinterconnect 40. In the depicted embodiment, temperature sensing device30 a is formed by chemical vapor deposition (CVD). In other embodiments,temperature sensing device 30 a is formed by alternative processingmethods. Isolator layer 56 is provided intermediate electricalinterconnect 40 and upper surface 20 of substrate 11.

Referring to FIG. 6, another construction for providing electricalconnection with temperature sensing device 30 a is shown. Upper surface20 and lower surface 22 of substrate 11 are shown in FIG. 6. Electricalinterconnect 40 is formed upon upper surface 20 as previously described.

The illustrated electronic device workpiece 10 also includes a via 44formed within substrate 11. Via 44 enables electrical connection ofupper surface 20 with lower surface 22. In particular, anotherelectrical interconnection 42 is formed upon lower surface 22 ofsubstrate 11. Via 44 is also plugged with a conductive material formingelectrical interconnection 45 providing coupling of interconnections 40,42. An insulating layer 56 a is preferably formed within via 44 toprovide insulation of interconnection 45.

Electrical interconnection 42 comprises a pad in the illustratedconfiguration. Alternatively, electrical connection 42 can be formed toextend to an edge of electronic device workpiece 10. Electricalinterconnection 42 can be coupled with external circuitry (not shown inFIG. 6) enabling monitoring of temperatures of electronic deviceworkpiece 10.

In some embodiments, the described electronic device workpiece isconfigured and utilized as a calibration wafer. Such calibration wafersare typically placed within a workpiece processing chamber and thechamber can be brought up to subject processing conditions at typicalelevated temperatures. Through the use of an electronic device workpiececonfigured as a calibration wafer, the temperature at various positionsupon electronic device workpieces to be processed can be determined.Thereafter, data provided by temperature sensing devices located uponthe electronic device workpiece can be utilized to provide temperaturecontrol and modify some aspect of the processing chamber.

The processing chamber is preferably modified to provide a uniformtemperature distribution across the entire surface of the electronicdevice workpiece being processed. In other processes, the processingchamber is modified to provide varied temperatures across a surface ofthe workpiece.

The modifications can be made with the calibration workpiece in placewithin the processing chamber. The effect of such modifications can beverified by the temperature sensing devices and associated temperaturemonitoring equipment coupled with the devices. Thereafter, thecalibration workpiece is removed and the equipment having been desirablycalibrated can be utilized to process other electronic device workpiecesin mass.

In another embodiment, temperature sensing devices are provided upon anelectronic device workpiece which will actually be processed andsubsequently utilized to fabricate integrated circuitry or othercomponents. The temperature sensing devices can be fabricated upon theelectronic device workpiece during the fabrication of the electronicdevice workpiece. In another embodiment, preexisting or prefabricatedtemperature sensing devices are positioned and adhered upon theelectronic device workpiece.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

What is claimed is:
 1. A semiconductor workpiece comprising: asemiconductive substrate having a substrate surface; a cavity includingplural sloped sidewalls and a bottom wall within the substrate; atemperature sensing device provided within the cavity and supported bythe substrate surface of the substrate, and an entirety of a devicesurface having a greatest dimension of the temperature sensing device ispositioned directly over the substrate surface of the substrate; and anelectrical interconnect at least partially formed upon the sloped wallsof the cavity and electrically coupled with the temperature sensingdevice.
 2. The semiconductor workpiece according to claim 1 wherein thesubstrate surface comprises substantially silicon.
 3. The semiconductorworkpiece according to claim 1 wherein the entirety of the devicesurface is directly supported by the substrate.
 4. The semiconductorworkpiece according to claim 1 further comprising a wire connectionadapted to electrically connect the electrical interconnect and thetemperature sensing device.
 5. The semiconductor workpiece according toclaim 1 wherein the electrical interconnect contacts the temperaturesensing device.
 6. The semiconductor workpiece according to claim 1wherein the substrate has an edge and the electrical interconnectextends from the temperature sensing device to the edge.
 7. Thesemiconductor workpiece according to claim 1 wherein the sidewalls aresloped at an angle within a range of fifty degrees to sixty degrees withrespect to the substrate surface of the substrate.
 8. The semiconductorworkpiece according to claim 1 further comprising an isolatorintermediate the substrate and the electrical interconnect.
 9. Thesemiconductor workpiece according to claim 1 further comprising aninterface connection in electrical connection with the electricalinterconnect, the interface connection being configured to provideelectrical coupling of the electrical interconnect and the temperaturesensing device with circuitry external of the semiconductor wafersubstrate.
 10. The semiconductor workpiece according to claim 1 whereinthe electrical interconnect comprises a conductive trace.
 11. Thesemiconductor workpiece according to claim 1 wherein the temperaturesensing device comprises a resistance temperature device.
 12. Thesemiconductor workpiece according to claim 1 wherein the substrateincludes a via and further comprising a conductor within the viaconfigured to electrically couple with the electrical interconnect. 13.The semiconductor workpiece according to claim 1 further comprisingplural additional temperature sensing devices borne by the substrate.14. The semiconductor workpiece according to claim 1 wherein thesubstrate comprises integrated circuitry, and the integrated circuitryis discrete from the temperature sensing device.
 15. A semiconductorworkpiece comprising: a semiconductor substrate having a substratesurface; a cavity formed in the semiconductor substrate surface; atemperature sensing device provided within the cavity and supported bythe semiconductor substrate; wherein the temperature sensing device isprovided in a temperature sensing relation with the semiconductorsubstrate; wherein the semiconductor substrate is a wafer; and whereinthe semiconductor substrate forms the cavity having sloped sidewalls,and further comprising an electrical interconnect at least partiallyformed upon the sloped walls of the cavity and electrically coupled withthe temperature sensing device.
 16. The semiconductor workpieceaccording to claim 15 further comprising a plurality of electricalinterconnects provided upon the semiconductor substrate and electricallycoupled with the temperature sensing device.
 17. The semiconductorworkpiece according to claim 16 herein the electrical interconnectscomprise wire bonding the electrical interconnect and the temperaturesensing device.
 18. The semiconductor workpiece according to claim 15wherein an entirety of a surface of the temperature sensing device issupported directly by the semiconductor substrate surface.
 19. Thesemiconductor workpiece according to claim 15 wherein the cavityincludes sloped sidewalls defined by the semiconductor substrate and abottom wall defined by the semiconductor substrate.
 20. Thesemiconductor workpiece according to claim 15 wherein the substratesurface comprises substantially silicon.
 21. The semiconductor workpieceaccording to claim 15 wherein the temperature sensing device comprises adevice surface having a greatest dimension of the temperature sensingdevice, and wherein an entirety of the device surface is positioneddirectly over the semiconductor substrate surface.
 22. The semiconductorworkpiece according to claim 15 wherein the substrate comprisesintegrated circuitry, and the integrated circuitry is discrete from thetemperature sensing device.